American scientists at the university of north Carolina has developed a new technology, without any increase in electricity consumption considerably increase the brightness of the light-emitting diode (LED). At the same time, with the aid of a special kind of coating material, the new LED compared with the ordinary LED products more stable, more flexible. Relevant papers published online in the international famous chemical journal Langmuir (Langmuir).
Paper first authors, north Carolina state university, Dr. Stewart Wilkins said that they are using on the polarity of gallium nitride semiconductor coating a self-organizing phosphate coating way to achieve this aim.
Researchers first through layers of self-assembly technology with nitrogen and gallium produce gallium nitride. Then increase the containing organophosphorus phosphate group of molecules, the coating on the surface of gallium nitride materials. Gallium nitride semiconductor used to improve the LED luminous efficiency of phosphate group material to ensure the stability of gallium nitride, make its not easy material of chemical reaction with the environment, reduces the likelihood of its was dissolved in the solution.
"It is very important to improve the stability of the gallium nitride." Wilkins said, "because this new technology for the future to create conditions in the biomedical field. For example, implantable sensor."
It is understood that compared with the common silicon semiconductor leds on the market, gallium nitride semiconductor light output can be improved. If under the same power consumption, silicon semiconductor LED luminous flux can reach 1000 lumens, gallium nitride semiconductor LED luminous flux will be able to reach more than 2000 lumens. Therefore, based on gallium nitride semiconductor LED luminous efficiency higher, more energy efficient. In addition, compared with silicon semiconductor LED, gallium nitride semiconductor LED small volume, light weight, are more likely to achieve integration.

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